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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 10, 1999, Pages 6047-6053

Effects of Addition of SiF4 during Growth of Nanocrystalline Silicon Films Deposited at 100°C by Plasma-Enhanced Chemical Vapor Deposition

(4) Ali, Atif Mossad a Inokuma, Takao a Kurata, Yoshihiro a Hasegawa, Seiichi a

a KANAZAWA UNIVERSITY (Japan)

Author keywords

Addition of sif4; High crystallinity; Low temperature deposition; Nanocrystalline silicon; Plasma CVD; Small grain size

Indexed keywords

COMPOSITION EFFECTS; FILM GROWTH; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; STRESSES;

CRYSTALLINITY;

SEMICONDUCTING FILMS;

EID: 0033311882 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.38.6047 Document Type: Article

Times cited : (16)

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