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Volumn PV 2005-05, Issue , 2005, Pages 274-281

Metal gated self-aligned gate-forward nMOSFET with ≤0.8 nm EOT fabricated by in-situ Ar/O 2 plasma oxidation of PVD Hf

Author keywords

[No Author keywords available]

Indexed keywords

HAFNIUM OXIDE; IN-SITU PLASMA OXIDATION;

CAPACITORS; DIELECTRIC MATERIALS; HAFNIUM; OPTIMIZATION; PHYSICAL VAPOR DEPOSITION; SILICON;

MOSFET DEVICES;

EID: 30844433205 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (2)

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