Electrical spin injection in forward biased Schottky diodes based on InGaAs-GaAs quantum well heterostructures

Applied Physics Letters

Volumn 89, Issue 18, 2006, Pages

  Baidus, N V ^a,b   Vasilevskiy, M I ^a   Gomes, M J M ^a   Dorokhin, M V ^b   Demina, P B ^b   Uskova, E A ^b   Zvonkov, B N ^b   Kulakovskii, V D ^c   Brichkin, A S ^c   Chernenko, A V ^c   Zaitsev, S V ^c  

^a UNIVERSITY OF MINHO   (Portugal)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^c INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; LIGHT POLARIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ELECTRICAL SPIN INJECTION; LIGHT EMITTING SCHOTTKY DIODE (LESD); QUANTUM WELL HETEROSTRUCTURES;

SCHOTTKY BARRIER DIODES;

EID: 33750683651     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2372579     Document Type: Article

References (24)

1. I. Zutic, J. Fabian, and S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004).
2. K. H. Ploog, J. Appl. Phys. 91, 7256 (2002).
3. H. J. Zhu, M. Ramsteiner, H. Kostial, M. Wasseimeier, H.-P. Schohonher, and K. H. Ploog, Phys. Rev. Lett. 87, 016601 (2001).
4. A. T. Hanbicki, B. T. Jonker, G. Itskos, G. Kioseoglou, and A. Petrou, Appl. Phys. Lett. 80, 1240 (2002).
5. V. F. Motsnyi, J. De Boeck, J. Das, W. Van Roy, G. Borghs, E. Goovaerts, and V. I. Safarov, Appl. Phys. Lett. 81, 265 (2002).
6. T. Manago and H. Akinaga, Appl. Phys. Lett. 81, 694 (2002).
7. C. H. Li, G. Kioseoglou, O. M. J. van't Erve, M. E. Ware, D. Gammon, R. M. Stroud, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 86, 132503 (2005).
8. E. I. Rashba, Phys. Rev. B 62, R16267 (2000).
9. V. F. Motsnyi, P. Van Dorpe, W. Van Roy, E. Goovaerts, V. I. Safarov, G. Borghs, and J. De Boeck, Phys. Rev. B 68, 245319 (2003).
10. O. M. J. van'Erve, G. Kioseoglou, A. T. Hanbicki, C. H. Li, B. T. Jonker, R. Mallory, M. Yasar, and A. Petrou, Appl. Phys. Lett. 84, 4334 (2004).
11. G. Schmidt, J. Phys. D 38, R107 (2005).
12. N. V. Baidus, P. B. Demina, M. V. Dorokhin, B. N. Zvonkov, E. I. Malysheva, and E. A. Uskova, Semiconductors 39, 17 (2005).
13. N. V. Baidus, B. N. Zvonkov, P. B. Mokeeva, E. A. Uskova, S. V. Tikhov, M. I. Vasilevskiy, M. J. M. Gomes, and S. A. Filonovich, Semicond. Sci. Technol. 19, S469 (2004).
14. E. A. Uskova, M. V. Dorokhin, B. N. Zvonkov, P. B. Demina, E. I. Malysheva, E. A. Pitirimova, and F. Z. Gilmutdinov, Poverkhnost 2, 89 (2006) (in Russian).
15. I. A. Karpovich, B. N. Zvonkov, N. V. Baidus, S. V. Tikhov, and D. O. Filatov, in Trends in Nanotechnology Research, edited by, Eugene V. Dirote, (Nove Science, Hauppauge, NY, 2004), Chap., pp. 173-208.
16. N. A. Gippius, A. L. Yablonskii, A. B. Dzyubenko, S. G. Tikhodeev, L. V. Kulik, V. D. Kulakovskii, and A. Forchel, J. Appl. Phys. 83, 5410 (1998).
17. T. Ando, A. B. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).
18. F. Meier and B. P. Zakharchenya, Optical Orientation (North-Holland, Amsterdam, 1984).
19. G. M. Minkov, A. A. Sherstobitov, A. V. Germanenko, O. E. Rut, V. A. Larionova, and B. N. Zvonkov, Phys. Rev. B 72, 165325 (2005).
20. S. Lee, S. R. Eric Yang, M. Dobrowolska, and J. K. Furdyna, Semicond. Sci. Technol. 19, 1125 (2004).
21. J.-H. Ku, J. Chang, and H. K. J. Eom, Appl. Phys. Lett. 88, 172510 (2006).
22. I. V. Kukushkin and V. B. Timofeev, Adv. Phys. 45, 147 (1996).
23. E. I. Rashba and V. B. Timofeev, Sov. Phys. Semicond. 20, 977 (1986).
24. T. Ando, J. Phys. Soc. Jpn. 43, 1616 (1977).