1.3-1.5 μm electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Baidus, N V ^a   Zvonkov, B N ^a   Mokeeva, P B ^a   Uskova, E A ^a   Tikhov, S V ^a   Vasilevskiy, M I ^b   Gomes, M J M ^b   Filonovich, S A ^b  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b UNIVERSITY OF MINHO   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRIC SPACE CHARGE; ELECTROLUMINESCENCE; ELECTRON TUNNELING; EXCITONS; FERMI LEVEL; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL COMMUNICATION; PHOTOLUMINESCENCE; QUANTUM THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM TUNNELING; RADIATIVE RECOMBINATION;

SCHOTTKY BARRIER DIODES;

EID: 1942420193     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/154     Document Type: Conference Paper

References (8)

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