Femtosecond pump-probe spectroscopy of intersubband relaxation dynamics in narrow InGaAs/AlAsSb quantum well structures

Applied Physics Letters

Volumn 89, Issue 17, 2006, Pages

  Tribuzy, C V B ^a   Ohser, S ^a   Winnerl, S ^a   Grenzer, J ^a   Schneider, H ^a   Helm, M ^a   Neuhaus, J ^b   Dekorsy, T ^b   Biermann, K ^c   Kunzel H ^c  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF KONSTANZ   (Germany)

^c FRAUNHOFER HEINRICH HERTZ INSTITUTE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CAPACITY; DOPING (ADDITIVES); ELECTRON TRANSITIONS; OPTICAL PUMPING; RELAXATION PROCESSES; SEMICONDUCTING INDIUM COMPOUNDS;

FEMTOSECOND PUMP PROBE SPECTROSCOPY; INTERSUBBAND RELAXATION DYNAMICS; RELAXATION CHANNELS; TIME CONSTANTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33750429590     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2360242     Document Type: Article

References (24)

1. Intersubband Transitions in Quantum Wells: Physics and Device Applications, Semiconductors and Semimetals, Vols. 62 and 66, edited by, H. C. Liu, and, F. Capasso, (Academic, San Diego, 2000).
2. T. Akiyama, N. Georgiev, T. Mozume, H. Yoshida, A. V. Gopal, and O. Wada, IEEE Photonics Technol. Lett. 14, 495 (2002).
3. R. Akimoto, B. S. Li, K. Akita, and T. Hasama, Appl. Phys. Lett. 87, 181104 (2005).
4. T. Elsaesser and M. Woerner, Phys. Rep. 321, 254 (1999).
5. D. Barate, R. Teissier, Y. Wang, and A. N. Baranov, Appl. Phys. Lett. 87, 051103 (2005).
6. D. Hofstetter, E. Baumann, F. R. Giorgetta, M. Graf, M. Maier, F. Guillot, E. Bellet-Amalric, and E. Monroy, Appl. Phys. Lett. 88, 121112 (2006).
7. G. Ghislotti, E. Riedo, D. Ielmini, and M. Martinelli, Appl. Phys. Lett. 75, 3626 (1999).
8. N. Georgiev, T. Dekorsy, F. Eichhorn, M. Helm, M. P. Semtsiv, and W. T. Masselink, Appl. Phys. Lett. 83, 210 (2003).
9. N. Georgiev and T. Mozume, J. Appl. Phys. 89, 1064 (2001).
10. T. Mozume, J. Kasai, N. Georgiev, T. Simoyama, A. V. Gopal, and H. Yoshida, Jpn. J. Appl. Phys., Part 1 42, 5500 (2003).
11. J. D. Heber, C. Gmachl, H. M. Ng, and A. Y. Cho, Appl. Phys. Lett. 81, 1237 (2002).
12. J. Hamazaki, H. Kunugita, K. Ema, A. Kikuchi, and K. Kishino, Phys. Rev. B 71, 165334 (2005).
13. R. Akimoto, K. Akita, F. Sasaki, and T. Hasama, Appl. Phys. Lett. 81, 2998 (2002).
14. M. P. Semtsiv, M. Ziegler, S. Dressler, W. T. Masselink, N. Georgiev, T. Dekorsy, and M. Helm, Appl. Phys. Lett. 85, 1478 (2004).
15. Q. Yang, C. Manz, W. Bronner, K. Köhler, and J. Wagner, Appl. Phys. Lett. 88, 121127 (2006).
16. L. R. Wilson, D. A. Carder, J. W. Cockburn, R. P. Green, D. G. Revin, M. J. Steer, M. Hopkinson, G. Hill, and R. Airey, Appl. Phys. Lett. 81, 1378 (2002).
17. D. G. Revin, M. J. Steer, L. R. Wilson, R. J. Airey, J. W. Cockburn, E. A. Zibik, and R. P. Green, Electron. Lett. 40, 874 (2004).
18. P. Borri, F. Romstad, W. Langbein, A. Kelly, J. Mork, and J. Hvam, Opt. Express 7, 107 (2000).
19. P. Harrison, Quantum Wells, Wires and Dots: Theoretical and Computational Physics of Semiconductor Nanostructures, 2nd edition (Wiley-Interscience, Chichester, England, 2005), pp. 103ff.
20. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
21. C. J. Stanton and D. W. Bailey, Phys. Rev. B 45, 8369 (1992).
22. S. Zollner, S. Gopalan, and M. Cardona, Appl. Phys. Lett. 54, 614 (1989).
23. D. Indjin, P. Harrison, R. W. Kelsall, and Z. Ikonić, Appl. Phys. Lett. 81, 400 (2002).
24. J. W. Cockburn, J. J. Finley, M. S. Skolnick, P. Wisniewski, R. Grey, G. Hill, and M. A. Pate, Appl. Phys. Lett. 70, 622 (1997).