InGaAs-AlAsSb quantum cascade structures emitting at 3.1 μm

Electronics Letters

Volumn 40, Issue 14, 2004, Pages 874-875

  Revin, D G ^a,b   Steer, M J ^a   Wilson, L R ^a   Airey, R J ^a   Cockburn, J W ^a   Zibik, E A ^a   Green, R P ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CRYOSTATS; ELECTROLUMINESCENCE; GROWTH (MATERIALS); INTERFACES (MATERIALS); LASER BEAM EFFECTS; SEMICONDUCTOR QUANTUM WELLS;

CONDUCTION BAND OFFSET; INTERSUBBAND DEVICE; MONOLAYER ROUGHNESS; QUANTUM CASCADE STRUCTURES;

INDIUM COMPOUNDS;

EID: 3142695443     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20045186     Document Type: Article

References (5)

1. Faist, J., Capasso, F., Sivco. D.L., Hutchinson, A.L., Chu, S.N.G., and Cho, A.Y.: 'Short wavelength (λ∼ 3.4 μm) quantum cascade laser based on strained compensated InGaAs/AIInAs', Appl. Phys. Lett., 1998, 72, pp. 680-682
2. Evans. A., Yu, J.S., David, J., Doris. L., Mi, K., Slivken. S., and Razeghi, M.: 'High-temperature, high-power, continuous-wave operation of buried heterostructure quantum cascade lasers', Appl. Phys. Lett., 2004, 84, pp. 314-316
3. Yarekha, D.A., Beck. M., Blaser, S., Aellen, T., Gini, E. Hofstetler, D. and Faist, J.: 'Continuous-wave operation of quantum cascade laser emitting near 5.6 μm', Electron. Lett., 2003, 39, pp. 1123-1125
4. Oeorgiev, N., and Mozume, T.: 'Photoluminescence study of InGaAs/ AIAsSb heterostructure', J. Appl. Phys., 2001, 89, pp. 1064-1069
5. Revin, D.G., Wilson, L.R., Zibik, E.A., Green, K.P., Cockbum, J.W., Steer, M.J., Airey, R J., and Hopkinson, M.: λ ∼ 4-5.3 μm intersubband emission from InGaAs-AIAsSb quantum cascade structures', Appl. Phys. Lett., 2004, 84, pp. 1447-1449