Above room temperature operation of short wavelength (λ=3.8 μm) strain-compensated In0.73Ga0.27As-AlAs quantum-cascade lasers

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1478-1480

  Semtsiv, M P ^a   Ziegler, M ^a   Dressler, S ^a   Masselink, W T ^a   Georgiev, N ^b   Dekorsy, T ^b   Helm, M ^b  

^a HUMBOLDT UNIVERSITY   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; BAND STRUCTURE; BUTENES; CLADDING (COATING); ETCHING; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES;

CHEMICALLY-ASSISTED ION BEAM ETCHING (CAIBE); GAS-SOURCE MOLECULAR BEAM EPITAXY (GSMBE); LASER OPERATIONS; QUANTUM-CASCADE LASERS (QCL);

QUANTUM WELL LASERS;

EID: 4944262388     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789246     Document Type: Article

References (12)

1. C. Gmachl, F. Capasso, D. L. Sivco, and A. Y. Cho, Rep. Prog. Phys. 64, 1533 (2001).
2. J. Faist, F. Capasso, D. L. Sivco, A. L. Hutchinson, S.-N. G. Chu, and A. Y. Cho, Appl. Phys. Lett. 72, 680 (1998).
3. B. S. Williams, S. Kumar, H. Callebaut, Q. Hu, and J. L. Reno, Appl. Phys. Lett. 83, 2124 (2003).
4. K. Ohtani and H. Ohno, Jpn. J. Appl. Phys., Part 2 41, L1279 (2002).
5. Q. K. Yang, C. Mann, F. Fuchs, R. Kiefer, K. Köhler, N. Rollbühler, H. Schneider, and J. Wagner, Appl. Phys. Lett. 80, 2048 (2002).
6. N. Georgiev, T. Dekorsy, F. Eichhorn, M. Helm, M. P. Semtsiv, and W. T. Masselink, Appl. Phys. Lett. 83, 210 (2003).
7. 2.
8. D. F. Nelson, R. C. Miller, and D. A. Kleinman, Phys. Rev. B 35, 7770 (1987).
9. C. G. Van de Walle, Phys. Rev. B 39, 1871 (1989).
10. I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
11. J. Faist, M. Beck, T. Aellen, and E. Gini, Appl. Phys. Lett. 78, 147 (2001).
12. B. Ishaug, W.-Y. Hwang, J. Um, B. Guo, H. Lee, and C.-H. Lin, Appl. Phys. Lett. 79, 1745 (2001).