Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers

Applied Physics Letters

Volumn 79, Issue 3, 2001, Pages 287-289

  Ha, Yong Ho ^a   Kim, Sehun ^a   Moon, Dae Won ^b   Jhe, Ji Hong ^a   Shin, Jung H ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ERBIUM; MONOLAYERS; NANOSTRUCTURED MATERIALS; REDUCTION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; THERMAL EFFECTS;

LUMINESCENCE TESTING; MEDIUM ENERGY ION SCATTERING SPECTROSCOPY (MEIS);

SEMICONDUCTOR SUPERLATTICES;

EID: 0035898349     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1383802     Document Type: Article

References (14)