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Volumn 26, Issue 4, 2006, Pages 313-316

Gas supply system for growth of high quality InGaN/GaN multi-quantum-wells by metal organic chemical vapor deposition

Author keywords

Gas supply system; MOCVD; MQWs

Indexed keywords

GAS SUPPLY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33750414139     PISSN: 16727126     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (1)

References (7)
  • 1
    • 0001357670 scopus 로고    scopus 로고
    • Two-step growth of high-quality GaN by hydride vapor phase epitaxy
    • Tavemier P R. Etzkorn E V, Wang Y et al. Two-step growth of high-quality GaN by hydride vapor phase epitaxy. 2000, 77 (12): 1804-1806
    • (2000) , vol.77 , Issue.12 , pp. 1804-1806
    • Tavemier, P.R.1    Etzkorn, E.V.2    Wang, Y.3
  • 3
    • 0142120602 scopus 로고    scopus 로고
    • Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters
    • Yong Hoon Cho, Lee S K, Kwack H S et al. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters. Applied Physics Letters. 2003, 83 (13): 2578-2580
    • (2003) Applied Physics Letters , vol.83 , Issue.13 , pp. 2578-2580
    • Cho, Y.H.1    Lee, S.K.2    Kwack, H.S.3
  • 4
    • 0035279816 scopus 로고    scopus 로고
    • Undoped AlGaN/GaN HEMTs for microwave power amplification
    • Lester F Eastman, Vinayak Tilak, Smart J et al. Undoped AlGaN/GaN HEMTs for Microwave Power Amplification. IEEE Transactions on Eletctron Devices. 2001, 48 (3): 479-484
    • (2001) IEEE Transactions on Eletctron Devices , vol.48 , Issue.3 , pp. 479-484
    • Eastman, L.F.1    Tilak, V.2    Smart, J.3
  • 5
    • 0036683898 scopus 로고    scopus 로고
    • InGaN/GaN Light emitting diodes with a p-down structure
    • Su Y K, Chang S J, Chih Hsin Ko et al. InGaN/GaN Light emitting diodes with a p-down structure. IEEE Transactions on Electron Devices. 2002, 49 (8): 1361-1366
    • (2002) IEEE Transactions on Electron Devices , vol.49 , Issue.8 , pp. 1361-1366
    • Su, Y.K.1    Chang, S.J.2    Ko, C.H.3
  • 6
    • 0033684318 scopus 로고    scopus 로고
    • Comparison of optical properties of GaN/AlGaN and InGaN/GaN single quantum wells
    • Shigefusa F Chichibu, Amane Shikanai, Takahiro Deguchi et al. Comparison of optical properties of GaN/AlGaN and InGaN/GaN single quantum wells. Japanese Journal of Applied Physics 2000, 39: 2417-2424
    • (2000) Japanese Journal of Applied Physics , vol.39 , pp. 2417-2424
    • Chichibu, S.F.1    Shikanai, A.2    Deguchi, T.3
  • 7
    • 0035368029 scopus 로고    scopus 로고
    • Effects of current spreading on the performance of GaN-based light-emitting diodes
    • Hyunsoo Kim, Seong Ju Park, Hyunsang Hwang. Effects of current spreading on the performance of GaN-based light-emitting diodes. IEEE Transactions on Electron Devices. 2001, 48 (6): 1065-1069
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.6 , pp. 1065-1069
    • Kim, H.1    Park, S.J.2    Hwang, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.