Influences of interface oxidation on transmission laser bonding of wafers for microsystem packaging

Microsystem Technologies

Volumn 13, Issue 1, 2007, Pages 49-59

  Tseng, Ampere A ^a   Park, Jong Seung ^a   Vakanas, George P ^a,b   Wu, Hongtao ^a,c   Raudensky, Miroslav ^d   Chen, T P ^e  

^a Arizona State University   (United States)

^b INTEL CORPORATION   (United States)

^c NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^d BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^e NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; ELECTRONICS PACKAGING; INTERFACES (MATERIALS); LASER APPLICATIONS; NEODYMIUM LASERS; OXIDATION; POWER TRANSMISSION;

BONDING INTERFACE; MICROSYSTEM PACKAGING; TRANSMISSION LASER BONDING (TLB); WAFER BONDING;

SILICON WAFERS;

EID: 33750356601     PISSN: 09467076     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00542-006-0249-1     Document Type: Article

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