Growth of MgCaO on GaN

Proceedings - Electrochemical Society

Volumn 11, Issue , 2003, Pages 344-349

  Onstine, A H ^a   Gila, B P ^a   Kim, J ^a   Herrero, A ^a   Mehandru, R ^a   Abernathy, C R ^a   Ren, F ^a   Pearton, S J ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON AFFINITY; FEASIBILITY; GATE DIELECTRICS; TERNARY OXIDES;

DEPOSITION; FERROELECTRIC MATERIALS; INTERFACES (MATERIALS); LATTICE CONSTANTS; LIME; MAGNESIA; MOLECULAR BEAM EPITAXY; PHASE SEPARATION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE;

EID: 5744229822     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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7. J. Kim, B. Gila, R. Mehandru, J. W. Johnson, J. H. Shin, K. P. Lee, B. Luo, A. Onstine, C. R. Abernathy, S. J. Pearton, F. Ren, Journal of The Electrochemical Society, 149 (8) G482 (2002)
8. J. Kim, R. Mehandru, B. Luo, F. Ren, B.P. Gila, A.H. Onstioe, C.R. Abernathy, S.J. Pearton, Y.Irokawa, Appl. Phys. Lett., 80, 4555 (2002)
9. J.K. Gillespie, R.C. Fitch, J. Sewell, R. Dettmer, G.D. Via, A. Crespo, T.J. Jenkins, B. Luo, R. Mehandru, J. Kim, F. Ren, B.P. Gila, A.H. Onstine, C.R. Abernathy, S.J. Pearton, IEEE Electron Device Letters, 23(9), 505 (2002)