Elastic and piezoelectric fields in substrates GaAs (001) and GaAs (111) due to a buried quantum dot

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6379-6387

  Pan, E ^a  

^a Structures Technology Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC FIELDS; GAAS; GAAS(001); ISOTROPIC MODELS; MATERIAL ANISOTROPY; MISFIT STRAINS; PIEZO-ELECTRIC FIELDS; PIEZOELECTRIC HALF-SPACE; PIEZOELECTRIC POTENTIAL; RECIPROCAL THEOREM; ROTATIONAL SYMMETRIES; SURFACE CONDITIONS; VERTICAL ELECTRIC FIELDS;

ANISOTROPY; CONTINUUM MECHANICS; ELECTRIC FIELDS; GALLIUM ARSENIDE; PIEZOELECTRICITY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SURFACES;

SEMICONDUCTING GALLIUM;

EID: 0037095169     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1468906     Document Type: Article

References (32)

1. D. Bimberg, M. Grundmann, and N. N. Ledentsov, Quantum Dot Heterostructures (Wiley, New York, 1998).
2. M. Grundmann, O. Stier, and D. Bimberg, Phys. Rev. B 52, 11969 (1995). prb PRBMDO 0163-1829
3. T. Benabbas, P. Francois, Y. Androussi, and A. Lefebvre, J. Appl. Phys. 80, 2763 (1996). jap JAPIAU 0021-8979
4. S. Kret, T. Benabbas, C. Delamarre, Y. Androussi, A. Dubon, J. Y. Laval, and A. Lefebvre, J. Appl. Phys. 86, 1988 (1999). jap JAPIAU 0021-8979
5. A. E. Romanov, G. E. Beltz, W. T. Fischer, P. M. Petroff, and J. S. Speck, J. Appl. Phys. 89, 4523 (2001). jap JAPIAU 0021-8979
6. V. Holy, G. Springholz, M. Pinczolits, and G. Bauer, Phys. Rev. Lett. 83, 356 (1999). prl PRLTAO 0031-9007
7. A. D. Andreev, J. R. Downes, D. A. Faux, and E. P. O'Reilly, J. Appl. Phys. 86, 297 (1999). jap JAPIAU 0021-8979
8. C. Pryor, J. Kim, L. W. Wang, A. J. Williamson, and A. Zunger, J. Appl. Phys. 83, 2548 (1998). jap JAPIAU 0021-8979
9. Y. Kikuchi, H. Sugii, and K. Shintani, J. Appl. Phys. 89, 1191 (2001). jap JAPIAU 0021-8979
10. D. A. Faux and G. S. Pearson, Phys. Rev. B 62, R4798 (2000). prb PRBMDO 0163-1829
11. J. R. Downes, D. A. Faux, and E. P. O'Reilly, J. Appl. Phys. 81, 6700 (1997). jap JAPIAU 0021-8979
12. J. H. Davies, J. Appl. Phys. 84, 1358 (1998), jap JAPIAU 0021-8979
13. Appl. Phys. Lett. 75, 4142 (1999). apl APPLAB 0003-6951
14. G. S. Pearson and D. A. Faux, J. Appl. Phys. 88, 730 (2000). jap JAPIAU 0021-8979
15. E. Pan and B. Yang, J. Appl. Phys. 90, 6190 (2001). jap JAPIAU 0021-8979
16. E. Pan and F. G. Yuan, Int. J. Solids Struct. 37, 5329 (2000). ijl IJSOAD 0020-7683
17. J. Singh, Physics of Semiconductors and their Heterostructures (McGraw-Hill, New York, 1993).
18. B. Jogai, J. Appl. Phys. 88, 5050 (2000). jap JAPIAU 0021-8979
19. B. Jogai, J. Appl. Phys. 90, 699 (2001). jap JAPIAU 0021-8979
20. E. Pan, J. Appl. Phys. 91, 3785 (2002). jap JAPIAU 0021-8979
21. S. Sanguinetti, M. Gurioli, E. Grilli, M. Guzzi, and M. Henini, Thin Solid Films 380, 198 (2000). tsf THSFAP 0040-6090
22. A. Patane, A. Levin, A. Polimeni, F. Schindler, P. C. Main, L. Eaves, and M. Henini, Appl. Phys. Lett. 77, 2979 (2000). apl APPLAB 0003-6951
23. B. W. Kim, J. Appl. Phys. 89, 1197 (2001). jap JAPIAU 0021-8979
24. D. L. Smith, Solid State Commun. 57, 919 (1986). ssc SSCOA4 0038-1098
25. D. L. Smith and C. Mailhiot, J. Appl. Phys. 63, 2717 (1988). jap JAPIAU 0021-8979
26. D. L. Smith and C. Mailhiot, Rev. Mod. Phys. 62, 173 (1990). rmp RMPHAT 0034-6861
27. E. Pan and F. G. Yuan, Int. J. Eng. Sci. 38, 1939 (2000). ijd IJESAN 0020-7225
28. E. Pan, Proc. R. Soc. London, Ser. A 458, 181 (2002).
29. J. F. Nye, Physical Properties of Crystals (Clarendon, Oxford, 1985).
30. E. Pan, Acta Mech. 87, 105 (1991). amv AMHCAP 0001-5970
31. A. H. D. Cheng and E. Detournay, Int. J. Solids Struct. 35, 4521 (1999). ijl IJSOAD 0020-7683
32. M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27 (1991). sst SSTEET 0268-1242