Oxidation of silicon carbide and the formation of silica polymorphs

Journal of Materials Research

Volumn 21, Issue 10, 2006, Pages 2550-2563

  Guinel, Maxime J F ^a   Norton, M Grant ^a  

^a Washington State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRISTOBALITE; SILICA POLYMORPHS; TRIDYMITE;

CRYSTAL ORIENTATION; INTERFACES (MATERIALS); OXIDATION; POLYSILICON; QUARTZ; SILICA; SINGLE CRYSTALS;

SILICON CARBIDE;

EID: 33749846858     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2006.0317     Document Type: Article

References (49)

1. 4. J. Electrochem. Soc. 142, 925 (1995).
2. Z. Zheng, R.E. Tressler, and K.E. Spear: Oxidation of single crystal silicon carbide. Part I. Experimental studies. J. Electrochem. Soc. 137, 854 (1990).
3. 2/SiC defects. J. Electron. Mater. 25, 909 (1996).
4. M.J-F. Guinel and M.G. Norton: Blowing of silica microforms on silicon carbide. J. Non-Cryst. Solids 351, 251 (2005).
5. L.U.J.T. Ogbuji and M. Singh: High-temperature oxidation behavior of reaction-formed silicon carbide ceramics. J. Mater. Res. 10, 3232 (1995).
6. G.H. Schiroky: Oxidation behavior of chemically vapor-deposited silicon carbide. Adv. Ceram. Mater. 2, 137 (1987).
7. D.S. Fox: Oxidation behavior of chemically vapor-deposited silicon carbide and silicon nitride from 1200° to 1600 °C. J. Am. Ceram. Soc. 81, 945 (1998).
8. L.U.J.T. Ogbuji: Effect of oxide devitrification on oxidation kinetics of SiC. J. Am. Ceram. Soc. 80, 1544 (1997).
9. T. Kingetsu, K. Ito, M. Takehara, and H. Masumoto: Kinetics of cristobalite growth on polycrystalline SiC film studied using high-temperature in situ x-ray diffractometry. Mater. Res. Bull. 33, 731 (1998).
10. J. Li, P. Eveno, and A.M. Huntz: Oxidation of SiC. Werkstoffe Korrosion 41, 716 (1990).
11. J.A. Costello and R.E. Tressler: Oxidation kinetics of hot-pressed and sintered α-SiC. J. Am. Ceram. Soc. 64, 327 (1981).
12. 3, additives between 1200 °C and 1400 °C. J. Eur. Ceram. Soc. 23, 2023 (2003).
13. P.F. Tortorelli and K.L. More: Effects of high water-vapor pressure on oxidation of silicon carbide at 1200 °C. J. Am. Ceram. Soc. 86, 1249 (2003).
14. A.H. Heuer, L.U. Ogbuji, and T.E. Mitchell: The microstructure of oxide scales on oxidized Si and SiC single crystals. J. Am. Ceram. Soc. 63, 354 (1980).
15. F. Sibieude, J. Rodriguez, and M.T. Clavaguera-Mora: Kinetics and crystallization studies by in situ x-ray diffraction of the oxidation of chemically vapor deposited SiC. Thin Solid Films 204, 217 (1991).
16. J.A. Costello and R.E. Tressler: Oxidation kinetics of silicon carbide crystals and ceramics: I, in dry oxygen. J. Am. Ceram. Soc. 69, 674 (1986).
17. 2 interfaces by TEM. Mater. Sci. Forum 126-128, 599 (1993).
18. R. B. Sosman: The Phases of Silica (Rutgers University Press, New Brunswick, NJ, 1965), p. 38.
19. J.F. McHone, M. Killgore, and A. Kudryavtsev: Cristobalite inclusions in Libyan desert glass: Confirmation using Raman spectroscopy. Lunar and Planetary Science XXXI Conference, Lunar and Planetary Institute, Houston, TX, 1877 (2000).
20. K.J. Kingma and R.J. Hemley: Raman spectroscopic study of microcrystalline silica. Am. Mineral. 79, 269 (1994).
21. R.S. Darling, I-M. Chou, and R.J. Bodnar: An occurrence of metastable cristobalite in high-pressure garnet granulite. Science 276, 91 (1997).
22. I.P. Swainson, M.T. Dove, and D.C. Palmer: Infrared and raman spectroscopy studies of the α-β phase transition in cristobalite. Phys. Chem. Miner. 30, 353 (2003).
23. J.B. Bates: Raman spectra of α and β cristobalite. J. Chem. Phys. 57, 4042 (1972).
24. 2. II. Cristobalite and tridymite. J. Chem. Phys. 68, 1531 (1978).
25. J.A. Gadsden: Infrared Spectra of Minerals and Related Inorganic Compounds (Butterworths, London, 1975).
26. L. D'Or, M. Haccuria, R. Machiroux: Infrared absorption spectra of the different polymorphs of silica and of hexagonal germanuim dioxide. Twenty-Seventh Congres International de Chimie Industrielle, Industrie Chimique Belge, Bruxelles, Belgium, 3, 150 (1955).
27. M. Haccuria: Infrared spectra of amorphous silica, tridymite, cristobalite, quartz and fused quartz. Bull. Soc. Chim. Belg. 62, 428 (1953).
28. Y-N. Xu and W.Y. Ching: Electronic and optical properties of all polymorphic forms of silicon dioxide. Phys. Rev. B 44, 11048 (1991).
29. V. Swamy, S.K. Saxena, B. Sundman, and J. Zhang: A thermodynamic assessment of silica phase diagram. J. Geophys. Res. 99, 11787 (1994).
30. 2 and cristobalite. Appl. Phys. Lett. 63, 1906 (1993).
31. K.L. Luthra: Some new perspectives on oxidation of silicon carbide and silicon nitride. J. Am. Ceram. Soc. 74, 1095 (1991).
32. 2-tridymite. Phys. Chem. Miner. 21, 421 (1994).
33. M.A. Carpenter and M. Wennemer: Characterization of synthetic tridymites by transmission electron microscopy. Am. Mineral. 70, 517 (1985).
34. D. Cellai, M.A. Carpenter, B. Wruck, and E.K.H. Salje: Characterization of high-temperature phase transitions in single crystals of steinbach tsridymite. Am. Mineral. 79, 606 (1994).
35. S.J. Stevens, R.J. Hand, and J.H. Sharp: Polymorphism of silica. J. Mater. Sci. 32, 2929 (1997).
36. Y. Geng and M.G. Norton: Early stages of oxidation of aluminum nitride. J. Mater. Res. 14, 2708 (1999).
37. E. Opila: Influence of alumina reaction tube impurities on the oxidation of chemically vapor-deposited silicon carbide. J. Am. Ceram. Soc. 78, 1107 (1995).
38. K. Okada, Y. Kameshima, and A. Yasumori: Chemical shifts of silicon x-ray photoelectron spectra by polymerization structures of silicates. J. Am. Ceram. Soc. 81, 1970 (1998).
39. 7/2 static charge reference. Surf. Interface Anal. 18, 59 (1992).
40. 7 configurations. N. Jb. Miner. Mh. 10, 433 (1999).
41. 2/α-SiC(0001) - (3 × 3). Phys. Rev. Lett. 86, 4342 (2001).
42. C. Radtke, I.J.R. Baumvol, and J. Morais: Initial stages of SiC oxidation investigated by ion scattering and angle-resolved x-ray photoelectron spectroscopies. Appl. Phys. Lett. 78, 3601 (2001),
43. 2 interface. J. Vac. Sci. Technol., A 15, 1597 (1997).
44. 2 interfaces. J. Vac. Sci. Technol., A 13, 767 (1995).
45. 2/ 6H-SiC(0001) 3 × 3 initial interface formation by Si overlayer oxidation. Appl. Phys. Lett. 75, 3360 (1999).
46. 2-SiC interfaces and oxidation of 6H-SiC single crystal Si-(001) and C-(00-1) surfaces. J. Mater. Res. 9, 3088 (1994).
47. 2 interface using photoemission and synchrotron radiation. J. Phys.: Condens. Matter 16, S1783 (2004).
48. G.M. Renlund, S. Prochazka, and R.H. Doremus: Silicon oxycarbide glasses: Part I. Preparation and chemistry. J. Mater. Res. 6, 2716 (1991).
49. G.M. Renlund, S. Prochazka, and R.H. Doremus: Silicon oxycarbide glasses: Part II. Structure and properties. J. Mater. Res. 6, 2723 (1991).