Characteristics of hydrogen storage alloy p-GaN ohmic contacts for InGaN LEDs

Journal of the Korean Physical Society

Volumn 49, Issue 3, 2006, Pages 899-902

  Chae, Seung Wan ^a,b   Kwak, Joon Seop ^c   Yoon, Suk Kil ^b   Kim, Mi Yang ^b   Song, June O ^d   Seong, Tae Yeon ^a   Kim, Tae Geun ^a  

^a Korea University   (South Korea)

^b Samsung Electro Mechanics   (South Korea)

^c Sunchon National University   (South Korea)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

GaN; Hydrogen storage material; LED; Nitride; p GaN ohmic; Schottky barrier; ZnNi

Indexed keywords

EID: 33749845352     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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