Electrical properties of metal-oxide semiconductor nano-particle device

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 432-435

  Kim, J H ^a   Kim, E K ^a   Lee, C H ^a   Song, M S ^a   Kim, Y H ^a   Kim, J ^b  

^a Hanyang University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Metal oxide semiconductor; Nano electrodes; Quantum dots; Tunneling device

Indexed keywords

COPPER OXIDES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; IRON OXIDES; MISFET DEVICES; NANOSTRUCTURED MATERIALS; POLYIMIDES; SEMICONDUCTOR QUANTUM DOTS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

METAL-OXIDE SEMICONDUCTORS; NANO-ELECTRODES; SINGLE ELECTRON TUNNELING TRANSISTORS (SET); TUNNELING DEVICES;

MOS DEVICES;

EID: 13444270663     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.094     Document Type: Conference Paper

References (10)

1. Charles W. Tu J. Vac. Sci. Technol. A 21 2003 S160
2. B.H. Choi, S.W. Hwang, I.G. Kim, H.C. Shin, Y. Kim, and E.K. Kim Microelectron. Eng. 47 1999 115
3. O.V. Salata, P.J. Dobson, P.J. Hull, and J.L. Hutchinson Thin Solid Films 251 1994 1
4. S.K. Lim, K.J. Chung, Y.-H. Kim, C.K. Kim, and C.S. Yoon J. Colloid Interf. Sci. 273 2004 517
5. Y. Kim, K.H. Park, T.H. Chung, H.J. Bark, J.Y. Yi, W.C. Choi, E.K. Kim, J.W. Lee, and J.J. Lee Appl. Phys. Lett. 78 2001 7
6. D.N. Kouvatsos, V. Ioannou-Sougleridis, and A.G. Nassiopoulou Mat. Sci. Eng. B 101 2003 270
7. A.T. Tilke, F.C. Simmel, R.H. Blick, H. Lorenz, and J.P. Kotthaus Prog. Quantum. Electron. 25 2001 97
8. Rolf J. Haug Electrochimi. Acta 40 1995 1283
9. D. Dovinos, D.G. Hasko, and Z. Helin Microelecton. Eng. 53 2000 199
10. Z.A.K. Durrani Phys. E 17 2003 572