Electrical linewidth test structures fabricated in monocrystalline films for reference-material applications

IEEE Transactions on Semiconductor Manufacturing

Volumn 11, Issue 2, 1998, Pages 182-193

  Cresswell, Michael W ^a,b   Allen, Richard A ^a,b   Guthrie, William F ^b   Sniegowski, Jeffry J ^c   Ghoshtagore, Rathindra N ^a,b   Linholm, Loren W ^a,b  

^a IEEE   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; ELECTRIC INSULATING MATERIALS; ION IMPLANTATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE TESTING; SILICA; SUBSTRATES; VOLTAGE MEASUREMENT;

CRITICAL DIMENSIONS; ELECTRICAL LINEWIDTH TEST STRUCTURES; MONOCRYSTALLINE FILMS; REFERENCE MATERIALS; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX);

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0032074603     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/66.670152     Document Type: Article

References (16)

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