-
1
-
-
33847131244
-
The Need for l00G Ethernet
-
Santa Clara Convention Center, Santa Clara, California, US
-
B. Kohl et al. "The Need for l00G Ethernet," Slides from the Management Forum Panel Feb. 8, 2 pm-3:15 pm, DesignCon 2006 by the International Engineering Consortium, Santa Clara Convention Center, Santa Clara, California, US.
-
Slides from the Management Forum Panel Feb. 8, 2 pm-3:15 pm, DesignCon 2006 by the International Engineering Consortium
-
-
Kohl, B.1
-
2
-
-
33847100798
-
9-1 PRBS Generator ICs in InP HBT Technology
-
San Francisco, pp, Feb. 4-8
-
9-1 PRBS Generator ICs in InP HBT Technology," International Solid-State Circuits Conference, San Francisco, pp. 260-263, Feb. 4-8, 2006.
-
(2006)
International Solid-State Circuits Conference
, pp. 260-263
-
-
Kjellberg, T.1
Hallin, J.2
Swahn, T.3
-
3
-
-
21644458454
-
11-l PRBS Generators in SiGe Bipolar Technology
-
Oct
-
11-l PRBS Generators in SiGe Bipolar Technology," IEEE Comp. Semiconductor IC Symp., pp. 219-222, Oct. 2004.
-
(2004)
IEEE Comp. Semiconductor IC Symp
, pp. 219-222
-
-
Knapp, H.1
-
4
-
-
27844591531
-
31-1 PRBS Generator in SiGe BiCMOS Technology
-
Feb
-
31-1 PRBS Generator in SiGe BiCMOS Technology," ISSCC Dig. Tech. Papers, pp. 342-343, Feb. 2005.
-
(2005)
ISSCC Dig. Tech. Papers
, pp. 342-343
-
-
Dickson, T.1
-
5
-
-
27844529797
-
7-l SiGe PRBS Generator 1C up to 86 Gbit/s
-
Oct
-
7-l SiGe PRBS Generator 1C up to 86 Gbit/s," European Gallium Arsenide Proc., pp. 335-338, Oct. 2004.
-
(2004)
European Gallium Arsenide Proc
, pp. 335-338
-
-
Wohlgemuth, O.1
-
6
-
-
17644404100
-
1-58 Gb/s PRBS generator with <1.1 ps RMS jitter in InP technology
-
Sept
-
H. Veenstra "1-58 Gb/s PRBS generator with <1.1 ps RMS jitter in InP technology," European Solid State Circuits Conf. Proc., pp. 359-362, Sept. 2004.
-
(2004)
European Solid State Circuits Conf. Proc
, pp. 359-362
-
-
Veenstra, H.1
-
7
-
-
0031677849
-
A 10-Gb/s Silicon Bipolar IC for PRBS Testing
-
Jan
-
O. Kromat et al. "A 10-Gb/s Silicon Bipolar IC for PRBS Testing," IEEE J. Solid State Circuits, vol. 33, pp. 76-85, Jan. 1998.
-
(1998)
IEEE J. Solid State Circuits
, vol.33
, pp. 76-85
-
-
Kromat, O.1
-
8
-
-
84889230468
-
A 12.5Gb/s Si Bipolar 1C for PRBS Generation and Bit Error Detection up to 25 Gb/s
-
Feb
-
M. Bussman et al. "A 12.5Gb/s Si Bipolar 1C for PRBS Generation and Bit Error Detection up to 25 Gb/s," IEEE Int. Solid-State Circuits Conf., pp. 152-153, Feb. 1993.
-
(1993)
IEEE Int. Solid-State Circuits Conf
, pp. 152-153
-
-
Bussman, M.1
-
9
-
-
30944446640
-
A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology
-
Palm Springs, CA, Oct
-
J. Hallin, T. Kjellberg and T. Swahn, "A 165-Gb/s 4:1 Multiplexer in InP DHBT Technology," IEEE Comp. Semiconductor IC Symp., Palm Springs, CA, Oct. 2005.
-
(2005)
IEEE Comp. Semiconductor IC Symp
-
-
Hallin, J.1
Kjellberg, T.2
Swahn, T.3
-
10
-
-
4444311569
-
144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs
-
June
-
T. Suzuki et al. "144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs," 2004 IEEE MTT-S International Microwave Symposium Digest, June 2004 pp. 117-120.
-
(2004)
2004 IEEE MTT-S International Microwave Symposium Digest
, pp. 117-120
-
-
Suzuki, T.1
-
11
-
-
10444270913
-
132-Gb/s 4:1 multiplexer in 0.13-μm SiGe-bipolar technology
-
M. Meghelli, "132-Gb/s 4:1 multiplexer in 0.13-μm SiGe-bipolar technology," IEEE Journal of Solid-State Circuits, vol. 39, pp. 2403-2407, 2004.
-
(2004)
IEEE Journal of Solid-State Circuits
, vol.39
, pp. 2403-2407
-
-
Meghelli, M.1
-
12
-
-
10444272337
-
120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
-
Y. Suzuki et al. "120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs," IEEE Journal of Solid-State Circuits, vol. 39, pp. 2397-2402, 2004.
-
(2004)
IEEE Journal of Solid-State Circuits
, vol.39
, pp. 2397-2402
-
-
Suzuki, Y.1
-
13
-
-
0742303633
-
100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology
-
K. Murata et al. "100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology," IEEE Journal of Solid-State Circuits, vol. 39, pp. 207-213, 2004.
-
(2004)
IEEE Journal of Solid-State Circuits
, vol.39
, pp. 207-213
-
-
Murata, K.1
-
14
-
-
3943092602
-
maxover 300 GHz in a new manufacturable technology
-
Aug
-
maxover 300 GHz in a new manufacturable technology," IEEE Electron Device Letters, vol. 25, pp. 520-522, Aug. 2004.
-
(2004)
IEEE Electron Device Letters
, vol.25
, pp. 520-522
-
-
He, G.1
-
15
-
-
33747388311
-
-
M. Le et al. Self-Aligned InP DHBTs for 150GHz Digital and Mixed Signal Circuits, Indium Phosphide and Related Materials Conference 2005, May 8-12 2005.
-
M. Le et al. "Self-Aligned InP DHBTs for 150GHz Digital and Mixed Signal Circuits," Indium Phosphide and Related Materials Conference 2005, May 8-12 2005.
-
-
-
|