메뉴 건너뛰기




Volumn 2006, Issue , 2006, Pages 79-84

Design and test of InP DHBT ICs for a 100 Gb/S demonstrator system

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; MULTIPLEXING EQUIPMENT;

EID: 33749510598     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (6)

References (15)
  • 3
    • 21644458454 scopus 로고    scopus 로고
    • 11-l PRBS Generators in SiGe Bipolar Technology
    • Oct
    • 11-l PRBS Generators in SiGe Bipolar Technology," IEEE Comp. Semiconductor IC Symp., pp. 219-222, Oct. 2004.
    • (2004) IEEE Comp. Semiconductor IC Symp , pp. 219-222
    • Knapp, H.1
  • 4
    • 27844591531 scopus 로고    scopus 로고
    • 31-1 PRBS Generator in SiGe BiCMOS Technology
    • Feb
    • 31-1 PRBS Generator in SiGe BiCMOS Technology," ISSCC Dig. Tech. Papers, pp. 342-343, Feb. 2005.
    • (2005) ISSCC Dig. Tech. Papers , pp. 342-343
    • Dickson, T.1
  • 5
    • 27844529797 scopus 로고    scopus 로고
    • 7-l SiGe PRBS Generator 1C up to 86 Gbit/s
    • Oct
    • 7-l SiGe PRBS Generator 1C up to 86 Gbit/s," European Gallium Arsenide Proc., pp. 335-338, Oct. 2004.
    • (2004) European Gallium Arsenide Proc , pp. 335-338
    • Wohlgemuth, O.1
  • 6
    • 17644404100 scopus 로고    scopus 로고
    • 1-58 Gb/s PRBS generator with <1.1 ps RMS jitter in InP technology
    • Sept
    • H. Veenstra "1-58 Gb/s PRBS generator with <1.1 ps RMS jitter in InP technology," European Solid State Circuits Conf. Proc., pp. 359-362, Sept. 2004.
    • (2004) European Solid State Circuits Conf. Proc , pp. 359-362
    • Veenstra, H.1
  • 7
    • 0031677849 scopus 로고    scopus 로고
    • A 10-Gb/s Silicon Bipolar IC for PRBS Testing
    • Jan
    • O. Kromat et al. "A 10-Gb/s Silicon Bipolar IC for PRBS Testing," IEEE J. Solid State Circuits, vol. 33, pp. 76-85, Jan. 1998.
    • (1998) IEEE J. Solid State Circuits , vol.33 , pp. 76-85
    • Kromat, O.1
  • 8
    • 84889230468 scopus 로고
    • A 12.5Gb/s Si Bipolar 1C for PRBS Generation and Bit Error Detection up to 25 Gb/s
    • Feb
    • M. Bussman et al. "A 12.5Gb/s Si Bipolar 1C for PRBS Generation and Bit Error Detection up to 25 Gb/s," IEEE Int. Solid-State Circuits Conf., pp. 152-153, Feb. 1993.
    • (1993) IEEE Int. Solid-State Circuits Conf , pp. 152-153
    • Bussman, M.1
  • 10
    • 4444311569 scopus 로고    scopus 로고
    • 144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs
    • June
    • T. Suzuki et al. "144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs," 2004 IEEE MTT-S International Microwave Symposium Digest, June 2004 pp. 117-120.
    • (2004) 2004 IEEE MTT-S International Microwave Symposium Digest , pp. 117-120
    • Suzuki, T.1
  • 11
    • 10444270913 scopus 로고    scopus 로고
    • 132-Gb/s 4:1 multiplexer in 0.13-μm SiGe-bipolar technology
    • M. Meghelli, "132-Gb/s 4:1 multiplexer in 0.13-μm SiGe-bipolar technology," IEEE Journal of Solid-State Circuits, vol. 39, pp. 2403-2407, 2004.
    • (2004) IEEE Journal of Solid-State Circuits , vol.39 , pp. 2403-2407
    • Meghelli, M.1
  • 12
    • 10444272337 scopus 로고    scopus 로고
    • 120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs
    • Y. Suzuki et al. "120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs," IEEE Journal of Solid-State Circuits, vol. 39, pp. 2397-2402, 2004.
    • (2004) IEEE Journal of Solid-State Circuits , vol.39 , pp. 2397-2402
    • Suzuki, Y.1
  • 13
    • 0742303633 scopus 로고    scopus 로고
    • 100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology
    • K. Murata et al. "100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology," IEEE Journal of Solid-State Circuits, vol. 39, pp. 207-213, 2004.
    • (2004) IEEE Journal of Solid-State Circuits , vol.39 , pp. 207-213
    • Murata, K.1
  • 14
    • 3943092602 scopus 로고    scopus 로고
    • maxover 300 GHz in a new manufacturable technology
    • Aug
    • maxover 300 GHz in a new manufacturable technology," IEEE Electron Device Letters, vol. 25, pp. 520-522, Aug. 2004.
    • (2004) IEEE Electron Device Letters , vol.25 , pp. 520-522
    • He, G.1
  • 15
    • 33747388311 scopus 로고    scopus 로고
    • M. Le et al. Self-Aligned InP DHBTs for 150GHz Digital and Mixed Signal Circuits, Indium Phosphide and Related Materials Conference 2005, May 8-12 2005.
    • M. Le et al. "Self-Aligned InP DHBTs for 150GHz Digital and Mixed Signal Circuits," Indium Phosphide and Related Materials Conference 2005, May 8-12 2005.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.