A 10-Gb/s silicon bipolar IC for PRBS testing

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 1, 1998, Pages 76-85

  Kromat, Oliver ^b   Langmann, Ulrich ^a,b,e,f   Hanke, Gerhard ^c,e,g,h,i   Hillery, William J ^{a,d,f,j,k,l,m}  

^a IEEE

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c DEUTSCHE TELEKOM LABORATORIES   (Germany)

^d HEWLETT PACKARD COMPANY   (United States)

^e RWTH AACHEN UNIVERSITY   (Germany)

^f Ruhr University Bochum ^*  (United States)

^g Forsch Inst Deutschen Bundespost   (Germany)

^h Deutsche Telekom   (Germany)

ⁱ Optical Multigigabit/s Syst Res G   (Germany)

^j IOWA STATE UNIVERSITY   (United States)

^k STANFORD UNIVERSITY   (United States)

^l UNIVERSITY COLLEGE LONDON   (United Kingdom)

^m Hewlett Packard Des CMOS ASIC's D   (United States)

more..

Author keywords

Gigabit circuits; Serial data communications; STM SDH

Indexed keywords

BINARY SEQUENCES; DATA COMMUNICATION SYSTEMS; ELECTRIC POWER SUPPLIES TO APPARATUS; ERROR DETECTION; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATED CIRCUIT TESTING; MULTIPLEXING; POLYNOMIALS; SYNCHRONIZATION;

ERROR TEST DATA; GIGABIT CIRCUITS;

BIPOLAR INTEGRATED CIRCUITS;

EID: 0031677849     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.654939     Document Type: Article

References (7)

1. O. Kromat et al., "A 10 Gb/s silicon bipolar IC for PRBS testing," in Int. Solid-State Circuits Conf. (ISSCC) 1996, Dig. Tech. Papers, pp. 206-207.
2. M. Bumann et al., "A 12.5 Gb/s Si-bipolar IC for PRBS generation and bit error detection up to 25 Gb/s," in Int. Solid-State Circuits Conf. (ISSCC) 1993, Dig. Tech. Papers, pp. 152-153.
3. J. J. O'Reilly, "Series-parallel generation of m-sequences," Radio Electron. Eng., vol. 45, no. 4, pp. 171-176, Apr. 1975.
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6. W. M. Huang et al., "A high-speed bipolar technology featuring selfaligned single-poly base and submicrometer emitter contacts," IEEE Electron Device Lett., vol. 11, pp. 412-414, Sept. 1990.
7. M. Moller, H.-M. Rein et al., "50 Gb/s time division multiplexer in Si-bipolar technology," Electron. Lett., vol. 31, no. 17, pp. 1431-1433, 1995.