A 72Gb/s 231-1 PRBS generator in SiGe BiCMOS technology

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 48, Issue , 2005, Pages

  Dickson, Timothy ^a   Laskin, Ekaterina ^a   Khalid, Imran ^b   Beerkens, Rudy ^b   Xie, Jingqiong ^b   Karajica, Boris ^b   Voinigescu, Sorin ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 27844591531     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. 11-l PRBS Generators in SiGe Bipolar Technology," IEEE Comp. Semiconductor IC Symp., pp. 219-222, Oct., 2004.
2. MAX 0.13μm SiGe:C BiCMOS Technology," Proc. IEEE BCTM, pp. 199-202, Sept., 2003.
3. A. Davies, "Delayed Versions of Maximal-Length Linear Binary Sequences," Electronics Letters, pp. 61-62, May, 1965.
4. T. Dickson et al, "A 2.5V, 40Gb/s Decision Circuit Using SiGe BiCMOS Logic," Symp. VLSI Circuits, pp. 206-209, June, 2004.
5. T. Dickson et al., "Si-Based Inductors and Transformers for 30-100GHz Applications," IEEE MTT-S Dig., pp. 205-208, June, 2004.