Generation-recombination noise in highly asymmetrical p-n junctions

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 320-329

  Tejada, J A Jiménez ^a   Godoy, A ^a   Palma, A ^a   Villanueva, J A López ^a  

^a UNIVERSITY OF GRANADA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRICAL DISTRIBUTIONS; CARRIER GENERATION; CHARGE FLUCTUATIONS; CURRENT NOISE; DEPLETION REGION; DOPANT IMPURITIES; ELECTRONS AND HOLES; GENERATION-RECOMBINATION; GENERATION-RECOMBINATION NOISE; METALLURGICAL JUNCTIONS; MOBILE CHARGE; MODEL-BASED OPC; P-N JUNCTION; REVERSE VOLTAGES; SPACE CHARGE REGIONS;

DOPING (ADDITIVES); ELECTRIC FIELDS;

SEMICONDUCTOR JUNCTIONS;

EID: 33749360291     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486252     Document Type: Article

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