Tuning of the electronic properties of self-assembled InAs/InP(001) quantum dots using grown-in defect mediated intermixing

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Dion, C ^a,b   Poole, P J ^a   Raymond, S ^a   Desjardins, P ^b   Schiettekatte, F ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GROWTH (MATERIALS); PHOTOLUMINESCENCE; POINT DEFECTS; RAPID THERMAL ANNEALING; SELF ASSEMBLY;

EMISSION SPECTRA; PHOTOLUMINESCENCE SPECTRA; QUENCH ENERGY; SELECTIVE EMISSION TUNING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33749266676     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357162     Document Type: Article

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