Diffusion of defects in InP studied using quantum well intermixing

Solid State Communications

Volumn 116, Issue 4, 2000, Pages 187-190

  Haysom, J E ^a   Poole, P J ^a   Williams, R L ^a   Raymond, S ^a   Aers, G C ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CORRELATION METHODS; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; MATHEMATICAL MODELS; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING INDIUM PHOSPHIDE;

QUANTUM WELL INTERMIXING (QWI);

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034274306     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00328-8     Document Type: Article

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