Measurement of heterojunction bipolar transistor thermal resistance based on a pulsed I-V system

Electronics Letters

Volumn 33, Issue 1, 1997, Pages 100-101

  McIntosh, P M ^a   Snowden, C M ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

Heat transfer; Heterojunction bipolar transistors; Power bipolar transistors; Power transistors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ENERGY DISSIPATION; HEAT RESISTANCE; HEAT TRANSFER; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; THERMAL CONDUCTIVITY; VOLTAGE MEASUREMENT;

POWER BIPOLAR TRANSISTOR; POWER TRANSISTOR; PULSED CURRENT VOLTAGE MEASUREMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031546290     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970059     Document Type: Article

References (6)

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