Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy

Applied Physics Letters

Volumn 89, Issue 12, 2006, Pages

  Yuen, Homan B ^a   Kim, Seongsin M ^a   Hatami, Fariba ^a   Harris, James S ^a   Chin, Alan H ^b  

^a Stanford University   (United States)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENT; DILUTE NITRIDES; INFRARED LUMINESCENCE; NITROGEN INCORPORATION;

CHARGE CARRIERS; MOLECULAR BEAM EPITAXY; NITROGEN; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748966274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2356102     Document Type: Article

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