Single InAs/InP quantum dot spectroscopy in 1.3-1.55 μm telecommunication band

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 185-189

  Takemoto, Kazuya ^a   Sakuma, Yoshiki ^b   Hirose, Shinichi ^a   Usuki, Tatsuya ^a   Yokoyama, Naoki ^a   Miyazawa, Toshiyuki ^c   Takatsu, Motomu ^c   Arakawa, Yasuhiko ^c,d  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Antibunching; Double cap growth; InAs InP single quantum dots; Photon correlation

Indexed keywords

ETCHING; LIGHT EMISSION; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SPECTROSCOPIC ANALYSIS; SPURIOUS SIGNAL NOISE; TELECOMMUNICATION SYSTEMS;

ANTIBUNCHING; DOUBLE-CAP GROWTH; INAS/INP SINGLE QUANTUM DOTS; PHOTON CORRELATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444288010     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.08.049     Document Type: Conference Paper

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