Internal microstrain and distribution of composition and cathodoluminescence over lapped AlxGa1-xN epilayers on sapphire

Semiconductors

Volumn 34, Issue 11, 2000, Pages 1248-1254

  Usikov, A S ^a   Tret'yakov, V V ^a   Bobyl', A V ^a   Kyutt, R N ^a   Lundin, W V ^a   Pushnyi B V ^a   Shmidt, N M ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0034310883     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1325417     Document Type: Article

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