Al0.35Ga0.65N pin diodes exhibiting sub-fA leakage currents

Electronics Letters

Volumn 41, Issue 14, 2005, Pages 820-822

  Aslam, S ^a   Yan, F ^a   Franz, D ^a   Ferguson, I ^b   Asghar, A ^b   Payne, A ^b  

^a RAYTHEON COMPANY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; GALLIUM NITRIDE; LEAKAGE CURRENTS; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; STATISTICAL METHODS;

CIRCULAR DIODES; DIAGNOSTIC TEST DIODES; EPILAYERS; REVERSE BIAS LEAKAGE CURRENT;

SEMICONDUCTOR DIODES;

EID: 22944443256     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051268     Document Type: Article

References (4)

1. Ting, L., et al.: 'Low-noise back illuminated AlGaN based pin solar-blind ultraviolet photodectors', IEEE J. Quantum Electron., 2001, 37, (4), pp. 538-545
2. Shah, J.M., et al.: 'Experimental analysis and theoretical model for anomalously high ideality factors (n ≫ 2.0) in AlGaN/GaN p-n junction diodes', J. Appl. Phys., 2003, 94, (4), p. 2627
3. Dmitriev, VA.: 'GaN based p-n structures grown on SiC substrates,' MRS Internet, J. Nitride Semicond. Res., 1996, 1, (29)
4. Mikhailova, M.P., et al.: 'Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions', Semicond. Sci. Technol., 2004, 19, pp. R109-R128