Improved surface morphology and background doping concentration in 4H-SiC(000-1) epitaxial growth by hot-wall CVD

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 85-88

  Wada, Keiji ^a,b   Kimoto, Tsunenobu ^a   Nishikawa, Kimito ^b   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

^b EcoTron Co LTD   (Japan)

Author keywords

C face; Deep level; Homoepitaxy; Hot wall CVD

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); GROWTH TEMPERATURE; SILICON CARBIDE; SURFACE MORPHOLOGY; THERMAL EFFECTS;

DEEP LEVEL; DOPING CONCENTRATION; HIGH-SPEED GROWTH; HOT WALL CVD;

EPITAXIAL GROWTH;

EID: 33748760269     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.85     Document Type: Conference Paper

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