Raman scattering characterization of SF-PECVD-grown hydrogenated microcrystalline silicon thin films using growth surface electrical bias

Journal of Materials Science: Materials in Electronics

Volumn 17, Issue 10, 2006, Pages 801-813

  Johnson, Erik V ^a,b   Kherani, Nazir P ^a   Zukotynski, Stefan ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; SILICON;

GROWTH SURFACE ELECTRICAL BIAS; HYDROGENATED MICROCRYSTALLINE SILICON THIN FILMS; LASER-INDUCED CRYSTALLIZATION; SADDLE FIELD PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION;

THIN FILMS;

EID: 33748742981     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-006-0026-z     Document Type: Article

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