Nondestructive Measurement of in Plane Residual Stresses in Thin Silicon Substrates by Infrared Transmission

Materials Evaluation

Volumn 59, Issue 10, 2001, Pages 1227-1233

  Zheng, Tieyu ^a   Danyluk, Steven ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Infrared; Nondestructive testing; Phase stepping; Photoelastiaty; Residual stress; Silicon

Indexed keywords

DATA HANDLING; LIGHT TRANSMISSION; NONDESTRUCTIVE EXAMINATION; RESIDUAL STRESSES; SHEAR STRESS; SINGLE CRYSTALS; STRESS MEASUREMENT; SUBSTRATES;

IN-PLANE RESIDUAL STRESS; MEASUREMENTS OF; NON-DESTRUCTIVE MEASUREMENT; PHASE STEPPING; PHOTOELASTIATY; SILICON SUBSTRATES; SINGLE CRYSTAL SILICON; STRESSES MEASUREMENTS; THIN SILICON SUBSTRATE; TRANSMISSION TECHNIQUES;

SILICON WAFERS;

EID: 1842686234     PISSN: 00255327     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

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