N-type doping in PECVD a-Si1-xCx:H obtained under 'starving plasma' condition

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 483-487

  Carreno M N P ^a   Pereyra, I ^a   Peres, H E M ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

N type doping; PECVD a Si1 xCx:H; Silane starving plasma

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; NITROGEN; PHOSPHORUS; PLASMA APPLICATIONS; SILANES; SILICON CARBIDE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); SILANE STARVING PLASMAS;

AMORPHOUS FILMS;

EID: 0032066788     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00098-2     Document Type: Article

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