Amorphous and excimer laser annealed SiC films for TFT fabrication

Solid-State Electronics

Volumn 50, Issue 2, 2006, Pages 241-247

  Garcia B ^a   Estrada, M ^a   Albertin, K F ^b   Carreno M N P ^b   Pereyra, I ^b   Resendiz, L ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

Amorphous and polycrystalline SiC TFTs; ELA

Indexed keywords

AMORPHOUS MATERIALS; ANNEALING; ELECTRIC CONDUCTIVITY; EXCIMER LASERS; FABRICATION; PARTICLE SIZE ANALYSIS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SURFACE ROUGHNESS; THIN FILMS;

AMORPHOUS LASERS; BAND GAP; EXCIMER LASER ANNEALING (ELA);

THIN FILM TRANSISTORS;

EID: 32344453336     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.11.006     Document Type: Article

References (11)

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