Optimization of P-A-SiC:H/P-NC-SiC:H double layer structure for a high efficiency A-Si:H based solar cell

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 1226-1229

  Myong, Seung Yeop ^a   Kim, Sang Soo ^a   Chevaleevski, Oleg ^a   Jun, Kyung Hoon ^a   Konagai, Makoto ^b   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; BORON; DEFECTS; ELECTRIC CONDUCTIVITY; HYDROGEN; INTERFACES (MATERIALS); LIGHT ABSORPTION; OPTIMIZATION; SILICON CARBIDE; STRUCTURE (COMPOSITION);

BUFFER LAYER; DOUBLE LAYER STRUCTURE; OPTICAL BANDGAP;

SILICON SOLAR CELLS;

EID: 0036953578     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. K. S. Lim, M. Konagai, and K. Takahashi, "A Novel Structure, High Conversion Efficiency p-SiC/graded p-SiC/i-Si/n-Si/metal Substrate-type Amorphous Silicon Solar Cell", J. Appl. Phys. 56, 1984, pp. 538-542.
2. W. Y. Kim, H. Tasaki, M. Konagai and K. Takahashi, "Use of a Carbon-alloyed Graded-band-gap Layer at the p/i Interface to Improve the Photocharacteristics of Amorphous Silicon Alloyed p-i-n Solar Cells Prepared by Photochemical Vapor Deposition", J. Appl. Phys. 61, 1987, pp. 3071-3076.
3. C. H. Lee, J. W. Jeon, and K. S. Lim, "Ultrathin Boron-doped Microcrystalline Silicon as a Novel Constant Bandgap Buffer Inserted at the p-a-SiC:H/i-a-Si:H Interface of Amorphous Silicon Solar Cells", J. Appl. Phys. 87, 2000, pp. 8778-8785.
4. S. Y. Myong, O. Chevaleevski, S. Miyajima, M. Konagai, and K. S. Lim, "Improvement of PIN-type Amorphous Silicon Solar Cell performance by Employing a Novel Boron-doped Nanocrystalline Silicon-carbide Buffe Layer", Appl. Phys. Lett., 2002 (submitted).
5. S. Y. Myong, H. K. Lee, E. Yoon, and K. S. Lim, "Highly Conductive Boron-Doped Nanocrystalline Silicon-Carbide Film Prepared by Low-Hydrogen-Dilution Photo-CVD Method Using Ethyle as a Carbon Source", J. Non-cryst. Solids 298, 2002, pp. 131-136.
6. K. H. Jun, J. D. Ouwens, R. E. I. Schropp, J. Y. Lee, J. H. Choi, H. S. Lee, and K. S. Lim, "Low degradation and fast annealing effects of amorphous silicon multilayer processed through alternate hydrogen dilution", J. Appl. Phys. 88, 2000, pp. 4881-4888.
7. J. H. Jang and K. S. Lim, "Etching and passivation effects on boron-doped amorphous silicon carbide p layer of amorphous silicon solar cell by hydrogen treatment using a mercury-sensitized photochemical vapor deposition method", Appl. Phys. Lett. 71, 1997, pp. 1846-1848.