Recovery from plasma-process-induced damage in porous silica low-k films by organosiloxane vapor annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 8 A, 2006, Pages 6231-6235

  Ono, Tetsuo ^a   Kinoshita, Keizo ^a   Takahashi, Hideki ^a   Fujii, Nobutoshi ^a   Sonoda, Yuzuru ^a   Oku, Yoshiaki ^a   Kohmura, Kazuo ^a   Yagi, Ryotaro ^a   Hata, Nobuhiro ^b   Kikkawa, Takamaro ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

Damage; Low k; Plasma; Porous silica; Recovery

Indexed keywords

ANNEALING; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROFLUORIC ACID; LEAKAGE CURRENTS; PLASMA APPLICATIONS;

HYDROPHOBIC BOND; ORGANOSILOXANE; TETRAMETHYLCYCLOTETRASILOXANE (TMCTS); VAPOR ANNEALING;

POROUS SILICON;

EID: 33748582010     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6231     Document Type: Article

References (14)

1. Y. Hayashi: Int. Interconnect Technol. Conf., 2002, p. 145.
2. T. C. Chang, P. T. Liu, Y. J. Mei, Y. S. Mor, T. H. Perng, Y. L. Yang and S. M. Sze: J. Vac. Sci. Technol. B 17 (1999) 2325.
3. F. Iacopi, M. Stucchi, O. Richard and K. Maex: Electrochem. Solid-State Lett. 7 (2004) G79.
4. D. Shamiryan, M. R. Baklanov, S. Vahnaelemeersch and K. Maex: J. Vac. Sci. Technol. B 20 (2002) 1923.
5. K. Yonekura, K. Goto, M. Matsuura, N. Fujiwara and K. Tsujimoto: Dry Process Symp., 2003, p. 19.
6. P. J. Wolf, B. White, J. H. Shin and R. McGowan: Dry Process Symp., 2003, p. 9.
7. N. Ohashi, K. Misawa, S. Sone, H. J. Shin, K. Inukai, E. Soda, S. Kondo, A. Furuya, H. Okamura, S. Ogawa and N. Kobayashi: IEDM Tech. Dig., 2003, p. 857.
8. Y. Oku, N. Fujii, Y. Seino, Y. Takasu, H. Takahashi, Y. Sonoda, T. Goto, H. Miyoshi, S. Takada and T. Kikkawa: Ext. Abstr. Solid State Devices and Materials, Tokyo, 2004, p. 46.
9. T. Ono, K. Kinoshita, T. Goto, H. Takahashi, N. Fujii, Y. Sonoda, Y. Oku, K. Kohmura, N. Hata and T. Kikkawa: Dry Process Symp., 2004, p. 229.
10. T. Ono, K. Kinoshita, H. Takahashi, N. Fujii, K. Kohmura, Y. Sonoda, R. Yagi, M. Shimoyama, N. Hata and T. Kikkawa: Int. Conf. Integrated Circuit Design and Technology, 2005, p. 107.
11. N. Fujii, K. Yamada, Y. Oku, N. Hata, Y. Seino, C. Negoro and T. Kikkawa: Mater. Res. Soc. Symp. Proc. 812 (2004) F.4.10.
12. K. Kohmura, S. Dike, M. Murakami, H. Tanaka, S. Takada, Y. Seino and T. Kikkawa: Mater. Res. Soc. Symp. Proc. 812 (2004) F.6.2.
13. T. Takei, A. Yamazaki, T. Watanabe and M. Chikazawa: J. Colloid Interface Sci. 188 (1997) 409.
14. X. S. Zhao, G. Q. Lu, A. K. Whittaker, G. J. Millar and H. Y. Zhu: J. Phys. Chem. B 101 (1997) 6525.