Robust Porous MSQ (k=2.3, E=12 GPa) for Low-temperature(<350°C) Cu/Low-k Integration using ArF Resist Mask Process

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 857-860

  Ohashi, N ^a   Misawa, K ^a   Sone, S ^a   Shin, H J ^a   Inukai, K ^a   Soda, E ^a   Kondo, S ^a   Furuya, A ^a   Okamura, H ^a   Ogawa, S ^a   Kobayashi, N ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; ELASTIC MODULI; ELECTROPLATING; LEAKAGE CURRENTS; MASKS; POROSITY; POROUS MATERIALS; PROBLEM SOLVING; ROBUSTNESS (CONTROL SYSTEMS); SILICON COMPOUNDS; SILICON WAFERS;

ABRASIVE-FREE POLISHING;

DIELECTRIC FILMS;

EID: 17644428376     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. L. P. Li, et al., VLSI Symposium, p. 105 (2003).
2. S. Sone, et al., VLSI Symposium, p. 125 (2003).
3. M. Ikeda, et al., Proc. IITC, p.86 (2003).
4. A. Matsushita, et al., Proc. IITC, p. 147 (2003).
5. S. Kondo, et al., Proc. IITC, p. 86 (2003).
6. K. Misawa, et al., Extended Abstract SSDM, p. 256 (2003)