Recovery of plasma process induced damage in porous silica low-k films by organosiloxane vapor post annealing

2005 International Conference on Integrated Circuit Design and Technology, ICICDT

Volumn , Issue , 2005, Pages 107-110

  Ono, Tetsuo ^a   Kinoshita, Keizo ^a   Takahashi, Hideki ^a   Fvijii, Nobutoshi ^a   Kohmuru, Kazno ^a   Sonoda, Yuzuru ^a   Yagi, Ryotaro ^a   Shimoyama, Masashi ^a   Hata, Nobuhiro ^b   Kikkawa, Takamaro ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROPHOBICITY; LEAKAGE CURRENTS; PLASMA ETCHING; SILICA;

ASHING; GAS CHEMISTRIES; PLASMA TREATMENTS; WET ETCHING;

POROUS SILICON;

EID: 25844491112     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/icicdt.2005.1502603     Document Type: Conference Paper

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