Luminescence efficiency at 1.5 μm of Er-doped thick SiO layers and Er-doped SiO/SiO2 multilayers

Applied Physics Letters

Volumn 89, Issue 10, 2006, Pages

  Adeola, G Wora ^a   Jambois, O ^a   Miska, P ^a   Rinnert, H ^a   Vergnat, M ^a  

^a INSTITUT JEAN LAMOUR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; HEAT TREATMENT; LUMINESCENCE; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; LUMINESCENCE EFFICIENCY; SIO LAYERS;

MULTILAYERS;

EID: 33748543286     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2349316     Document Type: Article

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