Passivation and activation: How do monovalent atoms modify the reactivity of silicon surfaces?. A perspective on the article, "The mechanism of amine formation on Si(1 0 0) activated with chlorine atoms", by C.C. Finstad, A.D. Thorsness, and A.J. Muscat

Surface Science

Volumn 600, Issue 17, 2006, Pages 3361-3362

  Hamers, Robert J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

Amine formation; Chlorine atoms; Silicon surfaces

Indexed keywords

ACTIVATION ANALYSIS; AMINES; CARRIER CONCENTRATION; CHEMICAL BONDS; CHLORINE; HYDROGEN; PASSIVATION; SILICON; SURFACE PHENOMENA;

AMINE FORMATION; CHLORINE ATOMS; MONOVALENT ATOMS; SILICON SURFACES;

CRYSTALLINE MATERIALS;

EID: 33748496642     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.05.025     Document Type: Short Survey

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