Recombination processes in midinfrared InGaAsSb diode lasers emitting at 2.37 μm

Applied Physics Letters

Volumn 89, Issue 5, 2006, Pages

  O'Brien, K ^a   Sweeney, S J ^a   Adams, A R ^a   Murdin, B N ^a   Salhi, A ^b   Rouillard, Y ^b   Joullie A ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ENERGY GAP; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; LIGHT EMITTING DIODES; METALLIZING; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR LASERS;

NONRADIATIVE RECOMBINATION; RECOMBINATION PROCESSES; SPLITTING ENERGY; THRESHOLD CURRENT;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33748444618     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2243973     Document Type: Article

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