Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

Superlattices and Microstructures

Volumn 39, Issue 5, 2006, Pages 436-445

  Fu, Ssu I ^a   Cheng, Shiou Ying ^b   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b Nation Ilan University   (Taiwan)

Author keywords

Current gain; Microwave characteristics; Offset voltage; Sulfur treatment

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTION BIPOLAR TRANSISTORS; PASSIVATION; POWER ELECTRONICS; SULFUR COMPOUNDS;

CURRENT GAIN; MICROWAVE CHARACTERISTICS; OFFSET VOLTAGE; SULFUR TREATMENT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33748267495     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.10.002     Document Type: Article

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