Optimisation of HSQ e-beam lithography for the patterning of FinFET transistors

Microelectronic Engineering

Volumn 83, Issue 4-9 SPEC. ISS., 2006, Pages 776-779

  Fruleux Cornu, Frédérique ^a   Penaud, Julien ^a   Dubois, Emmanuel ^a   François, Marc ^a   Muller, Michel ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

E beam lithography; FinFET transistors; HSQ; Hydrogen silsesquioxane resist; Multiple gate transistors; TMAH

Indexed keywords

AMMONIUM COMPOUNDS; ANISOTROPY; CONCENTRATION (PROCESS); DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS;

CRITICAL DIMENSION (CD); HYDROGEN SILSESQUIOXANE RESIST; MULTIPLE GATE TRANSISTORS; POST APPLICATION BAKE (PAB);

FIELD EFFECT TRANSISTORS;

EID: 33748256724     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.159     Document Type: Article

References (12)

1. Choi Y.K. IEEE Elec. Dev. Lett. 21 5 (2000) 254
2. D.A. Antoniadis, in: Technological Dig. Paper VLSI conference, Honolulu, 11-13 June, 2002.
3. L. Chang, MS Report, Univ of California at Berkeley, 2001.
4. K.G. Anil, in: Proceeding of the ESSDERC conference, Cork, 2003.
5. Choi Y.K. IEEE Trans. Elec. Dev. 49 3 (2002) 436
6. Namatsu H. Jpn. J. Appl. Phys. 39 (2000) 6836
7. Namatsu H. Microeletron. Eng. 61-62 (2002) 755
8. van Delft F. J. Vac. Sci. Technol. B 18 (2000) 3419
9. Trellenkamp St. Microeletron. Eng. 67-68 (2003) 376
10. Kretz J. Microeletron. Eng 67-68 (2003) 763
11. Henscheld W. J. Vac. Sci. Technol. B 21 (2003) 2018
12. F. Fruleux-Cornu, Mat. Sci. Eng. C 2005, in press.