20 nm electron beam lithography and reactive ion etching for the fabrication of double gate FinFET devices

Microelectronic Engineering

Volumn 67-68, Issue , 2003, Pages 763-768

  Kretz, J ^a   Dreeskornfeld, L ^a   Hartwich, J ^a   Rosner W ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Double gate MOSFET; Electron beam lithography; FinFET; Reactive ion etching

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FABRICATION; MASKS; OPTIMIZATION; REACTIVE ION ETCHING; TRANSMISSION ELECTRON MICROSCOPY;

ELEMENTAL MAPPING;

FIELD EFFECT TRANSISTORS;

EID: 0037682189     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(03)00136-9     Document Type: Conference Paper

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