Output power of an AlGaN/GaN HFET on sapphire substrate

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 7, 2006, Pages 1255-1258

  Zhang, Zhiguo ^a,b   Yang, Ruixia ^a   Li, Li ^a   Feng, Zhen ^b   Wang, Yong ^b   Yang, Kewu ^a,b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION   (China)

Author keywords

AlGaN GaN; Annealing; HFET; Isolation; Output power; Rectified performance

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

BREAKDOWN VOLTAGE; HFET; ISOLATION; OUTPUT POWER; RECTIFIED PERFORMANCE;

SEMICONDUCTOR DEVICES;

EID: 33748192528     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Khan M A, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN-AlGaN heterojunction. Appl Phys Lett, 1993, 63(9): 1214
2. Wu Y F, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett, 2004, 25(3): 117
3. Okamoto Y, Ando Y, Hataya K, et al. Improved power performance for recessed-gate AlGaN-GaN heterostructure FET with a field modulating plat. IEEE Trans Microw Theory Tech, 2004, 52(11): 2536
4. Chini A, Coffie R, Meneghesson G, et al. 2.1 A/mm current density AlGaN/GaN HEMT. Electron Lett, 2003, 39(7): 625
5. Kumar V, Lu W, Schwindt R, et al. AlGaN/GaN HEMTs on SiC with ft of over 120 GHz. IEEE Trans Electron Devices, 2002, 23: 455
6. Xing H L, Dora Y, Chini A, et al. High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plate. IEEE Electron Device Lett, 2004, 25(4): 161
7. Zhang Zhiguo, Yang Ruixia, Wang Yong, et al. Research on AlGaN/GaN HFET with transconductance of over 325 mS/mm. Chinese Journal of Semiconductors, 2005, 26(9): 1789 (in Chinese)
8. Wang Xiaoliang, Liu Xinyu, Hu Guoxin, et al. X-band GaN power HEMTs with power density of 2.23 W/mm grown on sapphire by MOCVD. Chinese Journal of Semiconductors, 2005, 26(10): 1865
9. Pearton S J, Zolper J C, Shui R J, et al. GaN: Processing, defects, and devices. J Appl Phys, 1999, 86(1): 1