AlGaN/GaN HFET with transconductance of over 325 mS/mm

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 26, Issue 9, 2005, Pages 1789-1792

  Zhang, Zhiguo ^a,b   Yang, Ruixia ^b   Wang, Yong ^a   Feng, Zhen ^b   Yang, Kewu ^a,b  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b CETC   (China)

Author keywords

AlGaN GaN; DC characteristic; Field plate; HFET; Transconductance

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

ALGAN/GAN; CUTOFF FREQUENCY; DIRECT CURRENT (DC) CHARACTERISTIC; FIELD PLATE; GATE LENGTH; HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET);

FIELD EFFECT TRANSISTORS;

EID: 30044431686     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

1. Khan M A, Bhattarai A, Kuznia J N, et al. High electron mobility transistor based on a GaN-AlGaN heterojunction. Appl Phys Lett, 1993, 63(9): 1214
2. Chen Q, Yang J W, Khan M A, et al. High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrate. Electron Lett, 1997, 33(16): 1413
3. Xing Huili, Dora Y, Chini A, et al. High breakdown voltage AlGaN/GaN HEMTs achieved by multiple field plate. IEEE Electron Device Lett, 2004, 25(4): 161
4. Wu Y F, Saxler A, Moore M, et al. 30-W/mm GaN HEMTs by field plate optimization. IEEE Electron Device Lett, 2004, 25(3): 117
5. Okamoto Y, Ando Y, Nakayama K, et al. A 149 W recessed-gate AlGaN/GaN FP-FET. IEEE MTT-S Dig, 2004: 1351
6. Zeng Qingming, Lu Changzhi, Liu Weiji, et al. Study on AlGaN/GaN HEMT devices. Journal of Functional Material and Devices, 2000, 6(3): 170 (in Chinese)
7. Zhang Jinwen, Yan Guizhen, Zhang Taiping, et al. Fabrication of Au-AlGaN/GaN HFET and its properties. Chinese Journal of Semiconductors, 2002, 23(4): 424 (in Chinese)
8. Xiao D P, Liu J, Wei K et al. High transconductance AlGaN/GaN HEMT growth on sapphire substrates. Chinese Journal of Semiconductors, 2003, 24(9): 907
9. Zhang Xiaoling, Lu Changzhi, Xie Xuesong, et al. Research on AlGaN/GaN HFET. Chinese Journal of Semiconductors. 2003, 24(8): 847 (in Chinese)
10. Zhang Xiaoling, Lu Changzhi, Xie Xuesong, et al. AlGaN/GaN HEMT with transconductance of over 220 mS/mm. Research and Progress of SSE, 2004, 24(2): 209 (in Chinese)
11. Shao Gang, Liu Xinyu, He Zhijing, et al. Development of AlGaN/GaN power HEMTs grown on sapphire substrates. Chinese Journal of Electron Devices, 2004, 27(3): 381 (in Chinese)