-
1
-
-
0027594601
-
Memory LSI reliability
-
May
-
M. Fukuma, H. Furuta, and M. Takada, "Memory LSI reliability," Proc. IEEE, vol. 81, no. 5, pp. 768-775, May 1993.
-
(1993)
Proc. IEEE
, vol.81
, Issue.5
, pp. 768-775
-
-
Fukuma, M.1
Furuta, H.2
Takada, M.3
-
2
-
-
84943235368
-
Oxide breakdown model and its impact on SRAM cell functionality
-
Sep.
-
R. Rodriguez, R. V. Joshi, J. H. Stathis, and C. T. Chuang, "Oxide breakdown model and its impact on SRAM cell functionality," in Proc. IEEE SISPAD, Sep. 2003, pp. 283-286.
-
(2003)
Proc. IEEE SISPAD
, pp. 283-286
-
-
Rodriguez, R.1
Joshi, R.V.2
Stathis, J.H.3
Chuang, C.T.4
-
3
-
-
33748102204
-
Simulating and improving microelectronic device reliability by scaling voltage and temperature
-
Mar.
-
X. Li, J. D. Walter, and J. B. Bernstein, "Simulating and improving microelectronic device reliability by scaling voltage and temperature," in Proc. IEEE 6th ISQED, Mar. 2005, pp. 496-502.
-
(2005)
Proc. IEEE 6th ISQED
, pp. 496-502
-
-
Li, X.1
Walter, J.D.2
Bernstein, J.B.3
-
4
-
-
0026836012
-
Advanced integrated-circuit reliability simulation including dynamic stress effects
-
Mar.
-
W. J. Hsu, B. J. Sheu, S. M. Gowda, and C. G. Hwang, "Advanced integrated-circuit reliability simulation including dynamic stress effects," IEEE J. Solid State Circuits, vol. 27, no. 3, pp. 247-257, Mar. 1992.
-
(1992)
IEEE J. Solid State Circuits
, vol.27
, Issue.3
, pp. 247-257
-
-
Hsu, W.J.1
Sheu, B.J.2
Gowda, S.M.3
Hwang, C.G.4
-
5
-
-
0027277202
-
Circuit reliability of hot electron induced degradation in high speed CMOS SRAM
-
B.-K. Liew and A. R. Alvarez, "Circuit reliability of hot electron induced degradation in high speed CMOS SRAM," in Proc. IEEE Custom Integr. Circuits Conf., 1993, pp. 30.2.1-30.2.4.
-
(1993)
Proc. IEEE Custom Integr. Circuits Conf.
-
-
Liew, B.-K.1
Alvarez, A.R.2
-
6
-
-
0032042724
-
Hot-carrier reliability in n-MOSFETs used as pass-transistors
-
Apr.
-
D. Goguenheim and A. Bravaix, "Hot-carrier reliability in n-MOSFETs used as pass-transistors," Microelectron. Reliab., vol. 38, no. 4, pp. 539-544, Apr. 1998.
-
(1998)
Microelectron. Reliab.
, vol.38
, Issue.4
, pp. 539-544
-
-
Goguenheim, D.1
Bravaix, A.2
-
7
-
-
0026836471
-
Hot-electron-induced input offset voltage degradation in CMOS differential amplifiers
-
S. Z. Mohamedi, V. H. Chan, J. T. Park, F. Nouri, B. W. Scharf, and J. E. Chung, "Hot-electron-induced input offset voltage degradation in CMOS differential amplifiers," in Proc. IEEE 30th Int. Annu. Reliab. Phys. Symp., 1992, pp. 76-80.
-
(1992)
Proc. IEEE 30th Int. Annu. Reliab. Phys. Symp.
, pp. 76-80
-
-
Mohamedi, S.Z.1
Chan, V.H.2
Park, J.T.3
Nouri, F.4
Scharf, B.W.5
Chung, J.E.6
-
8
-
-
0025576484
-
The effects of hot-electron degradation on analog MOSFET performance
-
Dec.
-
J. E. Chung, K. N. Quader, C. G. Sodini, P.-K. Ko, and C. Hu, "The effects of hot-electron degradation on analog MOSFET performance," in IEDM Tech. Dig., Dec. 1990, pp. 553-556.
-
(1990)
IEDM Tech. Dig.
, pp. 553-556
-
-
Chung, J.E.1
Quader, K.N.2
Sodini, C.G.3
Ko, P.-K.4
Hu, C.5
-
9
-
-
0042991426
-
Circuit implications of gate oxide breakdown
-
Aug.
-
J. H. Stathis, R. Rodriguez, and B. P. Linder, "Circuit implications of gate oxide breakdown," Microelectron. Reliab., vol. 43, no. 8, pp. 1193-1197, Aug. 2003.
-
(2003)
Microelectron. Reliab.
, vol.43
, Issue.8
, pp. 1193-1197
-
-
Stathis, J.H.1
Rodriguez, R.2
Linder, B.P.3
-
10
-
-
0036712470
-
The impact of gate-oxide breakdown on SRAM stability
-
Sep.
-
R. Rodriguez, J. H. Stathis, B. P. Linder, S. Kowalczyk, C. T. Chuang, R. V. Joshi, G. Northrop, K. Bernstein, A. J. Bhavnagarwala, and S. Lombardo, "The impact of gate-oxide breakdown on SRAM stability," IEEE Electron Device Lett., vol. 23, no. 9, pp. 559-561, Sep. 2002.
-
(2002)
IEEE Electron Device Lett.
, vol.23
, Issue.9
, pp. 559-561
-
-
Rodriguez, R.1
Stathis, J.H.2
Linder, B.P.3
Kowalczyk, S.4
Chuang, C.T.5
Joshi, R.V.6
Northrop, G.7
Bernstein, K.8
Bhavnagarwala, A.J.9
Lombardo, S.10
-
11
-
-
4243532310
-
Analysis of the effect of the gate oxide breakdown on SRAM stability
-
Sep.-Nov.
-
_, "Analysis of the effect of the gate oxide breakdown on SRAM stability," Microelectron. Reliab., vol. 42, no. 9-11, pp. 1445-1448, Sep.-Nov. 2002.
-
(2002)
Microelectron. Reliab.
, vol.42
, Issue.9-11
, pp. 1445-1448
-
-
-
12
-
-
0043175220
-
Failure analysis of 6T SRAM on low-voltage and high-frequency operation
-
May
-
S. Ikeda, Y. Yoshida, K. Ishibashi, and Y. Mitsui, "Failure analysis of 6T SRAM on low-voltage and high-frequency operation," IEEE Trans. Electron Devices, vol. 50, no. 5, pp. 1270-1276, May 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.5
, pp. 1270-1276
-
-
Ikeda, S.1
Yoshida, Y.2
Ishibashi, K.3
Mitsui, Y.4
-
13
-
-
0031257253
-
A detailed analysis of CMOS SRAM's with gate oxide short defects
-
Oct.
-
J. Segura and A. Rubio, "A detailed analysis of CMOS SRAM's with gate oxide short defects," IEEE J. Solid State Circuits, vol. 32, no. 10, pp. 1543-1550, Oct. 1997.
-
(1997)
IEEE J. Solid State Circuits
, vol.32
, Issue.10
, pp. 1543-1550
-
-
Segura, J.1
Rubio, A.2
-
14
-
-
0028578518
-
GOS defects in SRAM: Fault modeling and testing possibilities
-
Aug.
-
_, "GOS defects in SRAM: Fault modeling and testing possibilities," in Proc. Rec. IEEE Int. Workshop Memory Technol., Des. and Testing, Aug. 1994, pp. 66-71.
-
(1994)
Proc. Rec. IEEE Int. Workshop Memory Technol., Des. and Testing
, pp. 66-71
-
-
-
15
-
-
10044267465
-
Impact of negative bias temperature instability on digital circuit reliability
-
Jan.
-
V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, "Impact of negative bias temperature instability on digital circuit reliability," Microelectron. Reliab., vol. 45, no. 1, pp. 31-38, Jan. 2005.
-
(2005)
Microelectron. Reliab.
, vol.45
, Issue.1
, pp. 31-38
-
-
Reddy, V.1
Krishnan, A.T.2
Marshall, A.3
Rodriguez, J.4
Natarajan, S.5
Rost, T.6
Krishnan, S.7
-
16
-
-
25844479977
-
PMOS NBTI-induced circuit mismatch in advanced technologies
-
M. Agostinelli, S. Lau, S. Pae, and P. Marzolf, "PMOS NBTI-induced circuit mismatch in advanced technologies," in Proc. IEEE Int. Reliab. Phys. Symp., 2004, pp. 171-175.
-
(2004)
Proc. IEEE Int. Reliab. Phys. Symp.
, pp. 171-175
-
-
Agostinelli, M.1
Lau, S.2
Pae, S.3
Marzolf, P.4
-
17
-
-
33748106481
-
A new SPICE reliability simulation method for deep submicron CMOS VLSI circuits
-
to be published
-
X. Li et al., "A new SPICE reliability simulation method for deep submicron CMOS VLSI circuits," IEEE Trans. Device Mater. Reliab., to be published.
-
IEEE Trans. Device Mater. Reliab.
-
-
Li, X.1
-
18
-
-
33748111781
-
Advanced semiconductor wearout mechanisms lifetime and spice equivalent circuit modeling
-
to be published
-
X. Li and J. Bernstein, "Advanced semiconductor wearout mechanisms lifetime and spice equivalent circuit modeling," IEEE Trans. Device Mater. Reliab., to be published.
-
IEEE Trans. Device Mater. Reliab.
-
-
Li, X.1
Bernstein, J.2
-
19
-
-
0022576382
-
Temperature dependence of CMOS device reliability
-
C. Yao, J. Tzou, R. Cheung, and H. Chan, "Temperature dependence of CMOS device reliability," in Proc. IEEE IRPS, 1986, pp. 175-182.
-
(1986)
Proc. IEEE IRPS
, pp. 175-182
-
-
Yao, C.1
Tzou, J.2
Cheung, R.3
Chan, H.4
-
21
-
-
3042652187
-
Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns
-
Sep.
-
B. Kaczer, R. Degraeve, E. Augendre, M. Jurczak, and G. Groeseneken, "Experimental verification of SRAM cell functionality after hard and soft gate oxide breakdowns," in Proc. 33rd ESSDERC, Sep. 2003, pp. 75-78.
-
(2003)
Proc. 33rd ESSDERC
, pp. 75-78
-
-
Kaczer, B.1
Degraeve, R.2
Augendre, E.3
Jurczak, M.4
Groeseneken, G.5
-
22
-
-
0038184636
-
MOS transistor reliability under analog operation
-
Aug.-Oct.
-
R. Thewes, R. Brederlow, C. Schlunder, P. Wieczorek, B. Ankele, A. Hesener, L. Holz, S. Kessek, and W. Weber, "MOS transistor reliability under analog operation," Microelectron. Reliab., vol. 40, no. 8-10, pp. 1545-1554, Aug.-Oct. 2000.
-
(2000)
Microelectron. Reliab.
, vol.40
, Issue.8-10
, pp. 1545-1554
-
-
Thewes, R.1
Brederlow, R.2
Schlunder, C.3
Wieczorek, P.4
Ankele, B.5
Hesener, A.6
Holz, L.7
Kessek, S.8
Weber, W.9
|