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Volumn 38, Issue 4, 1998, Pages 539-544

Hot-carrier reliability in N-MOSFETs used as pass-transistors

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; HOT CARRIERS; RELIABILITY; SEMICONDUCTOR DEVICE MODELS;

EID: 0032042724     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(97)00217-5     Document Type: Article
Times cited : (2)

References (8)
  • 2
    • 0027202869 scopus 로고
    • AC versus DC hot-carrier degradation in n-channel MOSFETs
    • Mistry, K. R. and Doyle, B. AC versus DC hot-carrier degradation in n-channel MOSFETs. IEEE Transactions on Electron Devices, 1993, 1, 96-104.
    • (1993) IEEE Transactions on Electron Devices , vol.1 , pp. 96-104
    • Mistry, K.R.1    Doyle, B.2
  • 3
    • 0028426358 scopus 로고
    • Hot-carrier-reliability design rules for translating device degradation to CMOS digital circuit degradation
    • Quader, K. N., Fang, P.. Yue, J. T., Ko, P. K. and Hu, C. Hot-carrier-reliability design rules for translating device degradation to CMOS digital circuit degradation. IEEE Transactions on Electron Devices, 1994, 5, 681-691.
    • (1994) IEEE Transactions on Electron Devices , vol.5 , pp. 681-691
    • Quader, K.N.1    Fang, P.2    Yue, J.T.3    Ko, P.K.4    Hu, C.5
  • 4
    • 0028484261 scopus 로고
    • Hot-carrier degradation behavior of n- and p-channel MOSFETs under dynamic operation conditions
    • Bellens, R., Groeseneken, G., Heremans, P. and Maes, H. E. Hot-carrier degradation behavior of n- and p-channel MOSFETs under dynamic operation conditions. IEEE Transactions on Electron Devices, 1994, 8, 1421-1428.
    • (1994) IEEE Transactions on Electron Devices , vol.8 , pp. 1421-1428
    • Bellens, R.1    Groeseneken, G.2    Heremans, P.3    Maes, H.E.4
  • 5
    • 0027574665 scopus 로고
    • A coupled study by charge-pumping and the floating-gate techniques of hot-carrier induced defects in submicron LDD MOSFETs
    • Vuillaume, D., Marchetaux, J. C., Lippens, P. E., Bravaix, A. and Boudou, A. A coupled study by charge-pumping and the floating-gate techniques of hot-carrier induced defects in submicron LDD MOSFETs. IEEE Transactions on Electron Devices, 1993, 4, 773.
    • (1993) IEEE Transactions on Electron Devices , vol.4 , pp. 773
    • Vuillaume, D.1    Marchetaux, J.C.2    Lippens, P.E.3    Bravaix, A.4    Boudou, A.5
  • 6
    • 0029309639 scopus 로고
    • Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction
    • Chan, V. H. and Chung, J. E. Two-stage hot-carrier degradation and its impact on submicrometer LDD NMOSFET lifetime prediction. IEEE Transactions on Electron Devices, 1995, 42, 957.
    • (1995) IEEE Transactions on Electron Devices , vol.42 , pp. 957
    • Chan, V.H.1    Chung, J.E.2
  • 8
    • 0013285486 scopus 로고
    • Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor
    • Vuillaume, D. and Bravaix, A. Charging and discharging properties of electron traps created by hot-carrier injections in gate oxide of n-channel metal oxide semiconductor field effect transistor. Journal of Applied Physics, 1993, 73(5), 2559-2563.
    • (1993) Journal of Applied Physics , vol.73 , Issue.5 , pp. 2559-2563
    • Vuillaume, D.1    Bravaix, A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.