0.25 μm gate-length AlGaN/GaN power HEMTs on sapphire with fT of 77 GHz

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 6, 2006, Pages 963-965

  Zheng, Yingkui ^a   Liu, Guoguo ^a   He, Zhijing ^a   Liu, Xinyu ^a   Wu, Dexin ^a  

^a INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

GaN; High electron mobility transistor; Sapphire substrate

Indexed keywords

CURRENT DENSITY; GALLIUM NITRIDE; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES;

CONTINUOUS WAVE OUTPUT POWER; POWER DEVICES; UNITY CURRENT GAIN CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33747830228     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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8. Zheng Yingkui, He Zhijing, Wu Dexin. T-shape gate process and its application in HFET fabrication. The Sixth International Conference on Solid-State and Integrated-Circuit Technology, 2001