Electronic band structure of strained C- and M-plane GaN films investigated by polarized photoreflectance spectroscopy

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 882-886

  Ghosh, S ^a,b   Brandt, O ^a   Grahn, H T ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036930565     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<882::AID-PSSB882>3.0.CO;2-X     Document Type: Conference Paper

References (7)

1. P. Waltereit, O. Brandt, A. Trampert, H.T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K.H. Ploog, Nature 406, 865 (2000).
2. A. Thamm, O. Brandt, A. Trampert, and K.H. Ploog, phys. stat. sol. (a) 180, 73 (2000).
3. P. Waltereit, O. Brandt, M. Ramsteiner, R. Uecker, P. Reiche, and K.H. Ploog, J. Cryst. Growth 218, 143 (2000).
4. S. Ghosh and H.T. Grahn, J. Appl. Phys. 90, 500 (2001).
5. G.L. Bir and G.E., Pikus, Symmetry and Strain Induced Effects in Semiconductors, Wiley, New York 1974.
6. S. Ghosh, P. Waltereit, O. Brandt, H.T. Grahn, and K.H. Ploog, Phys. Rev. B 65, 75202 (2002).
7. S. Ghosh, P. Waltereit, A. Thamm, O. Brandt, H.T. Grahn, and K.H. Ploog, phys. stat. sol. (a) 192, 72 (2002).