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Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 128-132

The evidence for a preferential growth of a MnAs thin film on an as-preadsorbed Si(001) surface

(8) Nakamura, M a Shuzo, M a Ono, K a Fujioka, H a Tanaka, M a Nishinaga, T b Watanabe, Y a Oshima, M a

a UNIVERSITY OF TOKYO (Japan)

b NTT Basic Research Laboratories (Japan)

Author keywords

Interface; MBE; MnAs; Photoelectron spectroscopy

Indexed keywords

ADSORPTION; FILM GROWTH; HETEROJUNCTIONS; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING MANGANESE COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS; SILICON WAFERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

MANGANESE SILICIDE; SILICON OXIDE;

SEMICONDUCTING FILMS;

EID: 17144457561 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(98)00038-5 Document Type: Article

Times cited : (2)

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