Photomixers fabricated on nitrogen-ion-implanted GaAs

Applied Physics Letters

Volumn 87, Issue 4, 2005, Pages

  Mikulics, M ^a,b   Marso, M ^b   Mayorga, I Cámara ^a   Gusten R ^a   Stancek S ^c   Kovac P ^c   Wu, S ^d,f   Li, Xia ^d,f   Khafizov, M ^d,f   Sobolewski, R ^d,f   Michael, E A ^e   Schieder, R ^e   Wolter, M ^b   Buca, D ^b   Forster A ^b   Kordos P ^b   Luth H ^b  

^a MAX PLANCK INSTITUT FÜR RADIOASTRONOMIE   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^d University of Rochester   (United States)

^e UNIVERSITY OF COLOGNE   (Germany)

^f UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HARDWARE-IN-THE-LOOP (HWIL); IMPLANTATION-INDUCED DEFECTS; LINEAR GRATING; PHOTOMIXERS;

ARSENIC COMPOUNDS; ION IMPLANTATION; NITROGEN; OPTOELECTRONIC DEVICES; POSITIVE IONS; SIGNAL PROCESSING; THRESHOLD ELEMENTS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 23744514583     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2006983     Document Type: Article

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